Semiconductor memory device, method of driving the same and method of fabricating the same

ABSTRACT

A semiconductor memory device includes a plurality of memory cell transistors arranged along a common semiconductor layer. Each of the plurality of memory cell transistors comprises a first source/drain region and a second source/drain region formed in the common semiconductor layer; a gate stack formed on a portion of the common semiconductor layer between the first source/drain region and the second source/drain region; and an electrical floating portion in the portion of the common semiconductor layer, a charge state of the electrical floating portion being adapted to adjust a threshold voltage and a channel conductance of the memory cell transistor. The plurality of memory cell transistors connected in series with each other along the common semiconductor layer provide a memory string.

CROSS-REFERENCES TO RELATED APPLICATION

This application is a division of U.S. patent application Ser. No.16/366,967 filed on Mar. 27, 2019, which claims benefits of priority ofKorean Patent Application No. 10-2018-0035542 filed on Mar. 28, 2018.The disclosure of each of the foregoing application is incorporatedherein by reference in its entirety.

BACKGROUND OF THE INVENTION 1. Field

The present invention relates to a semiconductor memory device, and moreparticularly, to a semiconductor memory device, method of driving thesame and method of fabricating the same.

2. Description of the Related Art

A memory cell of a direct random access memory DRAM of a semiconductormemory device may include a switching element for controlling a readingoperation/a write operation and a capacitor for storing information. Asthe DRAM is scale-downed, the area occupied by the capacitors of thememory cells is continuously decreasing. As a technique for securing aneffective capacity by compensating a reduced cell area, there has beenproposed, for example, a technique of implementing a lower electrodehaving a 3-dimensional form, such as a cylinder or a fin. As othertechnique, a method of increasing the height of the lower electrode hasbeen also suggested. However, the latest design rule of 20 nm or lessrequires that the aspect ratio of the capacitor should be about 25 inorder to secure an enough capacitance. It is difficult to implement theharsh design rule easily with the current level of a process technology.

As a new structure of a DRAM memory device capable of increasing thedensity of integration of the DRAM while overcoming the difficulties insuch a fabricating process, a single transistor DRAM device thatimplements a memory cell using only a single transistor withoutcapacitors is being intensively researched. The operation of the singletransistor DRAM element is performed through the steps for storing andreading data by using a floating body effect of an active area of thesingle transistor.

Even for the single transistor DRAM device having such a newarchitecture, a scaling down of the device is still required forhigh-speed and low-power driving, and additionally, a driving methodwith high reliability is urgently required. If a conventionalsemiconductor fabricating technology may be applied for the singletransistor DRAM device, there is an advantage that mass production ofthe device may be easily fulfilled.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide a highly integratedDRAM device including a single transistor memory cell in which acapacitor is omitted.

Furthermore, it is another object of the present invention to provide areliable method of driving the semiconductor memory device.

Furthermore, it is still another object of the present invention is toprovide a method of fabricating easily the semiconductor memory device.

In order to solve the above-mentioned technological problems, asemiconductor memory device according to an embodiment of the presentinvention may include a plurality of memory cell transistors arrangedalong a common semiconductor layer. Each of the plurality of memory celltransistors may include a first source/drain region and a secondsource/drain region formed in the common semiconductor layer; a gatestack formed on a portion of the common semiconductor layer between thefirst source/drain region and the second source/drain region; and anelectrical floating portion in the portion of the common semiconductorlayer, a charge state of the electrical floating portion being adaptedto adjust a threshold voltage and a channel conductance of the memorycell transistor. In addition, the plurality of memory cell transistorsmay provide a memory string connected in series with each other alongthe common semiconductor layer.

In one embodiment according to the present invention, a bottom of thecommon semiconductor layer is insulated so that the non semiconductorlayer may have an SOI structure. Both side portions of the electricalfloating portion may be electrically insulated by a depletion regionformed by a junction interface with the first source/drain region.

In one embodiment according to the present invention, the electricalfloating portion may be charged by a GIDL (Gate Induced Drain Leakage)mechanism. In other embodiment according to the present invention, theelectrical floating portion may be charged by an impact-ionizationmechanism.

The semiconductor device may further include a row buffer memory forbacking up a data state of each the plurality of memory celltransistors. The common semiconductor layer may be provided by asemiconductor pillar structure extending in a direction perpendicular tothe substrate. In one embodiment according to the present invention, thecommon semiconductor layer may have a hollow cylinder structure, and theinner portion of the cylinder structure is filled with an insulatorplug.

In one embodiment according to the present invention, the electricalfloating portion includes a charge trap member. The charge trap membermay include a grain boundary of a semiconductor material, nanocrystal, atwo-dimensional material an insulator thin film, a detect structure, ora combination thereof.

In order to solve the above-mentioned technological problems, asemiconductor memory device according to an embodiment of the presentinvention may include memory strings, each of them including a pluralityof memory cell transistors connected in series; word lines coupled togate electrodes of each of the plurality of memory cell transistors; bitlines connected to one end of each of the memory strings; source linesconnected to other end of each of the memory strings; a row decoderelectrically connected to the plurality of memory cell transistorsthrough the word lines; and a column decoder electrically coupled to theplurality of memory cell transistors through the bit lines.

The plurality of memory cell transistors may be spaced apart in a firstdirection and in a second direction different from the first directionon a substrate and may be formed along a common semiconductor layerperpendicularly extending o the substrate. Each of the plurality ofmemory cell transistors may include a first source/drain region and asecond source/drain region formed in the common semiconductor layer; agate stack formed on a portion of the common semiconductor layer betweenthe first source/drain region and the second source/drain region and iscoupled to each of the word lines; and an electrical floating portionwhich is defined in the portion of the common semiconductor layer andadjusts at least one of a threshold voltage of the memory celltransistor and a conductance of the channel according to a chargedstate.

Both side portions of the electrical floating portion may beelectrically insulated by a depletion region formed by a junctioncoupling with the first source/drain region. In one embodiment accordingto the present invention, the electrical floating portion may be chargedby a GIDL (Gate induced Drain Leakage) mechanism. In other embodimentaccording to the present invention, the electrical floating portion maybe charged by an impact-ionization mechanism.

In one embodiment according to the present invention, the semiconductormemory device may further include a row buffer memory for backing up adata state of each the plurality of memory cell transistors. In oneembodiment according to the present invention, an array of the rowbuffer memories may provide a row buffer memory layer, and a memory cellarray including the memory strings may have a layer structure separatedfrom the row buffer memory layer.

The common semiconductor layer may be provided by a semiconductor pillarstructure extending in a direction perpendicular to the substrate. Inone embodiment according to the present invention, the commonsemiconductor layer has a hollow cylinder structure, and the insideportion of the hollow cylinder structure is filled with an insulatorplug.

In one embodiment according to the present invention, the electricalfloating portion may include a charge trap member. The trap member mayinclude a grain boundary of a semiconductor material, nanocrystal, atwo-dimensional material an insulator thin film, a defect structure, ora combination thereof.

In order to solve the above-mentioned technological problems, asemiconductor memory device according to an embodiment of the presentinvention may be provided. The semiconductor memory device comprisesmemory strings, each of them including a plurality of memory celltransistors which are connected in series and having a floating portion;word lines coupled to a gate electrode of each of the plurality ofmemory cell transistors; bit lines connected to one end of each of thememory strings; source lines connected to other end of each of thememory strings; a row decoder electrically connected to the plurality ofmemory cell transistors through the word lines; and a column decoderelectrically coupled to the plurality of memory cell transistors throughthe bit line.

According to the drive method of a semiconductor memory device, aprogramming step including a step for applying a first driving voltageto a selected bit line, and a step for applying a second driving voltageless than the first driving voltage to non-selected bit lines orgrounding the non-selected bit lines, and a step for applying a programvoltage to the selected word line and applying a first pass voltage tothe unselected word lines; a step for applying a third driving voltageto the selected bit line and for applying a fourth driving voltage tothe non-selected bit lines or grounding the non-selected bit lines; anda step for applying a reading voltage to the selected word line and forapplying a second pass voltage to the unselected word lines may beperformed.

During the programming step, the first pass voltage may include ahigh-pass voltage applied to the word lines on the selected bit lineside among the non-selected word lines, and a low-pass voltage smallerthan the high-pass voltage applied to the word lines on the source lineside of the unselected word lines. In one embodiment according to thepresent invention, during the reading step, the third driving voltageand the fourth driving voltage may be identical or the fourth drivingvoltage may be less than the third driving voltage. In one embodimentaccording to the present invention, the second driving voltage and thefourth driving voltage may be identical. During the programming step,the floating portion may be charged by the GIDL mechanism.

In one embodiment according to the present invention, an erasing stepincluding a step for applying a fifth negative driving voltage to theselected bit line and for applying a sixth positive driving voltage tothe unselected bit lines; and step for applying a third pass voltage toall the word lines may be performed. In one embodiment according to thepresent invention, the third pass voltage may have the same value asthat of the first pass voltage or the second pass voltage.

In one embodiment according to the present invention, a step for backingup data state of the non-selected memory cell transistor belonging tothe selected memory string prior to the erasing step may be additionallyperformed. In this case, the step for backing up data state may beperformed by a row buffer memory. In one embodiment according to thepresent invention, a refresh step of reading data state of the memorycell transistors at a predetermined period and programming the memorycell transistors may be performed additionally.

In order to solve other technological problems, a method for fabricatinga semiconductor memory device according to an embodiment of the presentinvention may include a step for providing a substrate; a step forrepeatedly alternately stacking an impurity-containing insulating layerand a sacrificial layer for a dopant on the substrate; a step forforming semiconductor pillars passing through the impurity insulatingfilm and the sacrificial layer repeatedly stacked in a verticaldirection, arranged in a first direction parallel to the substrate andin a second direction different from the first direction and extendingin a direction perpendicular to the substrate; a step for forming afirst trench region extending in the first direction and the verticaldirection to form a stacked structure of an impurity-containinginsulating layer pattern and a sacrificial layer pattern in therepeatedly alternately stacked structure of the impurity-containinginsulating layer and the sacrificial layer, so as to the semiconductorcolumns pillars arranged in the second direction within the stackedstructure of the impurity-containing insulating layer and thesacrificial layer, a step for removing the sacrificial layer patternfrom the stack structure of the impurity-containing insulating layerpattern and the sacrificial layer pattern exposed through the firsttrench region to expose the surfaces of the semiconductor columnsbetween the impurity-containing insulating layer patterns; a step forforming a gate insulating film on the exposed surfaces of the exposedsemiconductor pillars by a heat process on the exposed surfaces, and forforming a source/drain region by doping impurities into a region of thesemiconductor pillars where the impurity-containing insulating layerpatterns are in contact with; and a step for forming a conductive filmfilling at least a part of the cell spaces in which the gate insulatingfilm is formed.

The impurity-containing insulating layer may include an insulator matrixor a dopant element contained in the insulator matrix. The dopantelement may be physically dispersed or chemically combined in theinsulator matrix. In other embodiments according to the presentinvention, the dopant element may be physically or chemically adsorbedor coated on a surface of the insulator matrix. In one embodimentaccording to the present invention, the impurity-containing insulatinglayer may include PSG (a phosphoric silicate glass).

In one embodiment according to the present invention, the step forforming the semiconductor pillars may be realized by a step for formingfirst holes passing through the stack of the repeatedly stackedinsulating films and the sacrificial layer; and a step for forming asemiconductor layer in the first holes. In one embodiment according tothe present invention, the step for filling second holes defined by thesemiconductor layer with a core insulator may be performed.

The heat process may be performed under an oxidizing atmosphere, and thegate insulating film may be formed by thermally oxidizing the surface ofthe semiconductor pillars. A floating portion for information storagemay be formed between the source/drain regions adjacent to the regionsof the semiconductor pillars under the conductive film. In oneembodiment according to the present invention, a step for forming anelectrical wiring on other end of the semiconductor pillars may beperformed additionally.

The electrical floating portion may include a charge trap member. Thetrap member may include a grain boundary of a semiconductor material,nanocrystal, a two-dimensional material an insulator thin film, a defectstructure, or a combination thereof.

According to the embodiment of the present invention, since a DRAMdevice using a single transistor without a capacitor is realized by astructure in which the memory cell transistors having a floating portionfor storing information are connected in series, a semiconductor devicewith a highly integration, high-speed and low-power consumption can beprovided.

Furthermore, according to an embodiment of the present invention, thereis provided a method of driving a semiconductor memory device which mayperform random access to serially connected memory cells and thereby,may implement DRAM operations through which a reliable programming,reading, erasing, and correction operations may be executed.

In addition, according to the embodiment of the present invention, thereis provided a method of fabricating a semiconductor memory device whichcan secure mass production easily by employing a conventionallyestablished three-dimensional NAND flash memory technology as a DRAMfabricating technology.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a cross-sectional diagram of memory strings of asemiconductor memory device according to an embodiment of the presentinvention and FIG. 1B is a circuit diagram illustrating a memory cellarray including memory strings.

FIGS. 2A and 2B are cross-sectional diagrams illustrating a logic stateof a memory cell transistor MC according to an exemplary embodiment ofthe present invention.

FIG. 3 is a graph illustrating an I-V characteristic change according toa logic state of a memory cell transistor.

FIG. 4 is a graph illustrating characteristics for explaining aprogramming operation of a memory cell transistor according to anembodiment of the present invention.

FIGS. 5A and 5B are graphs for explaining characteristics according tovarious embodiments of the present invention.

FIG. 6A is a circuit diagram illustrating a method of programming amemory cell transistor according to an embodiment, and FIG. 6B is across-sectional diagram schematicaly illustrating a programmingoperation of a selected memory cell transistor.

FIG. 7A and FIG. 7B are a circuit diagram illustrating a method ofreading a memory cell transistor according to an embodiment of thepresent invention, and a graph illustrating I-V characteristics.

FIG. 8A is a circuit diagram illustrating a method of erasing a memorycell transistor according to an embodiment of the present invention, andFIG. 8B is a cross-sectional diagram schematically illustrating anerasing operation of an erased memory cell transistor.

FIG. 9 is a circuit diagram illustrating a semiconductor memory deviceincluding a row buffer memory according to one embodiment of the presentinvention.

FIG. 10 is a waveform diagram for explaining a refresh operation of asemiconductor memory device according to an embodiment of the presentinvention.

FIG. 11 is an exploded perspective diagram illustrating athree-dimensional architecture of a semiconductor memory deviceincluding a row buffer memory according to an embodiment of the presentinvention.

FIG. 12A-FIG. 12I are cross-sectional diagrams sequentially illustratinga method of fabricating a semiconductor memory device according to anembodiment of the present invention.

FIGS. 13A-13I are plan diagrams corresponding to respectivecross-sectional diagrams of FIG. 12A to FIG. 12I.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, the preferred embodiments of the present invention will bedescribed in detail with reference to the accompanying drawings.

The embodiments of the present invention are provided so that the scopeand the spirits of the present invention may be explained morecompletely and accurately to those having a common knowledge in therelated art. The following embodiments may be modified in various otherforms, and the scope of the present invention is not limited to thefollowing embodiments. Rather, these embodiments are provided so thatthis disclosure may be explained more faithfully and completely, and maybe described to fully convey the concept of the invention to thoseskilled in the art.

In the drawings, the same reference numerals refer to the same elements.Also, as used herein, the term, “and/or” includes any one or allcombinations of more than one item among the listed items.

The terms used herein are used to illustrate the embodiments and are notintended to limit the scope of the invention. Also, although aterminology is described in the singular form in this specification,unless the context clearly indicates the singular form, the singularform may include plural forms. Further, it is to be understood that theterm, “comprise” and/or “comprising” used herein should be interpretedas specifying the presence of stated shapes, numbers, steps, operations,members, elements and/or a group thereof, and does not exclude thepresence or addition of other features, numbers, operations, members,elements, and/or groups thereof.

Reference herein to a layer formed “on” a substrate or other layer mayrefer to a layer formed directly on top of the substrate or other layer,or to a middle layer formed on the substrate or other layer, or a layerformed on middle layers. It will also be understood by those skilled inthe art that structures or shapes that are arranged in an “adjacent”manner to other features may have portions that overlap or are disposedbelow the adjacent features.

As used herein, the terms, “below,” “above.” “upper,” “lower,”“horizontal,” or “vertical” may be used to describe the relationshipsbetween one configuring member, layer or region; and other configuringmember, layer or region as shown in the drawings. It is to be understoodthat these terms are employed to encompass the different directions ofthe device as well as the directions indicated in the drawings.

In the following descriptions, the embodiments of the present inventionwill be explained with reference to cross-sectional diagramsschematically illustrating ideal embodiments (and intermediatestructures) of the present invention. In these drawings, for example,the size and shape of the members may be exaggerated for convenience andclatity of description, and in actual implementation, variations of theillustrated shape may be expected. Accordingly, the embodiments of thepresent invention should not be construed as being limited to thespecific shapes of the regions shown herein. In addition, the referencenumerals of members in the drawings refer to the same members throughoutthe drawings.

FIG. 1A is a cross-sectional diagram of memory strings MS (MS0-MS2) of asemiconductor memory device according to an embodiment of the presentinvention, and FIG. 1B is a circuit diagram illustrating a memory cellarray MA including memory strings MS (MS0-MS2).

Referring to FIG. 1A and FIG. 1B, a memory cell array if may include atleast one memory strings MS (MS0-MS2) in which a plurality of memorycells M0-M23 are connected in series. For example, the plurality ofmemory strings MS may be arranged in a plane in the row direction(x-axis direction) and the column direction (Y-axis direction) within aspace that may be specified according to the coordinate system OM.Alternatively, the plurality of memory strings MS may be arrangedvertically as well as in the plane in the row direction (x-axisdirection) and the column direction (Y-axis direction) within the spacethat may be specified according to the coordinate system OM. The X axisdirection and the Y axis direction may be orthogonal or have any acuteangle, for example, 60° and any obtuse angle, for example, 120°. Inaddition, the memory strings MS are linearly arranged along the x-axisor the y-axis, or may be arranged in any regular meander pattern.However, the embodiments of the present invention are not limitedthereto.

The memory strings MS may include a common semiconductor layer 21extending vertically to the substrate 10. A plurality of memory cellsM1-M23 may be connected in series with each other through the commonsemiconductor layer 21. In FIGS. 1A and 1B, a configuration in which thememory cell transistors M0-M7; M8-M15; M16-M23 for constituting each ofmemory cells are connected in series are illustrated as an example. Thenumber (in other word, stage) of the memory cell transistors may be anynumber, such as, for example, 32, 48, 64, 72, 96 and 128, which may beappropriately selected by considering the required memory capacity,yield, and/or the total resistance connected in series, and the presentinvention is not limited thereto.

In order to provide the common semiconductor layer 21, a semiconductorcolumn structure 20 for providing a channel layer of a conventionalthree-dimensional vertical NAND flash memory may be employed. Forexample, channels of the memory strings (MS, MS0-MS2) may be provided bythe common semiconductor layer 21 of the semiconductor column 20including the common semiconductor layer 21 and the insulator plug 22filling the inside of the common semiconductor layer 21. In this case,the common semiconductor layer 21 may have a vertically elongatedcylindrical shape from the main surface of the substrate 10. An innerside part of the common semiconductor layer 21 contacts with theinsulator plug 22 and thus, is electrically insulated by the insulatorplug 22, so that the plurality of memory cell transistors M0-M7; 8-M15;M16-M23 may have an active region such as a silicon-on-insulator SOIwith suppressed semiconductor body effect. In another embodiment, theinsulator plug 22 may be omitted. this case, the common semiconductorlayer 21 may have a vertically elongated solid cylinder shape formedfully from a semiconductor material.

The common semiconductor layer 21 may be a silicon-based semiconductormaterial such as silicon single crystal, polysilicon or silicon carbide;a compound semiconductor such as GaAs, GaF, or InP; a two-dimensionalsemiconductor material such as graphene or molybdenum sulfide; an oxidesemiconductor such as a zinc oxide or indium tin oxide; or a combinationsuch as a mixture: of these materials; or laminate structure of thesematerials, but the present invention is not limited thereto. In oneembodiment, a trap element may be further formed to induce a chargetrapping to extend the time of leakage of electrons or holes charged inthe floating body or increase the charge efficiency, as described later.The trap element may be, for example, a grain boundary of asemiconductor material, a defect structure, a dispersed nanocrystal, atwo-dimensional material such graphene, an insulator thin film such as asilicon nitride layer, or a combination thereof. The trap element mayprovide any energy level for trapping charges transferred from thesource/drain regions, and the present invention is not limited to theabove-described materials.

A thickness of the common semiconductor layer 20 having a hollowcylinder shape or a diameter of the common semiconductor layer in theshape of a hollow cylinder which are already mentioned in the foregoingparagraphs may be appropriately selected in order to obtain an electricfloating effect described later, and the present invention is notlimited thereto.

The plurality of memory cell transistors M0-M7; M8-M15; M16-M23 mayinclude a first and second source/drain regions S/D, and a gate stackhaving a gate insulating film 30 and a gate electrode 40 between thefirst source/drain region SD and the second source/drain region S/D,respectively, The surface region of the common semiconductor layer 21 incontact with the lower portion of the gate insulating film 30 becomes achannel region of each memory cell transistor M0-M7; M8-M15; M16-M23. Afloating portion FB may be provided below the channel region of thecommon semiconductor layer 21. In one embodiment, the floating portionFB may be formed between neighboring source/drain regions S/D of each ofthe memory cell transistors M0-M7; M8-M15; M16-M23 indicated by a dottedline.

The side surface of the floating portion FB of each memory celltransistor M0-M7; M8-M15; M16-M23 may be electrically insulated by adepletion region formed by a junction interface with the first andsecond source/drain regions. For example, when each of the memory celltransistors M0-M7; M8-M15; M16-M23 is an N type transistor, thesource/drain regions S/D are N type high concentration impurity regions.When the channel region and the floating portion FB are a P typeimpurity or an intrinsic semiconductor, the side surface of the floatingportion FB may be electrically insulated by the junction interface.Further, since the bottom surface of the floating portion FB is incontact with the insulator plug 22 when the common semiconductor layer21 has a hollow cylinder shape and the hollow inner region is filledwith the insulator plug 22, the bottom surface of the floating portionFB may be electrically isolated. In the case where the commonsemiconductor layer 21 has a columnar shape, an electrical isolation maybe achieved only if the entire side surface of the floating portion FBhas the depletion region by the junction interface,

In this way, the electrical isolation of the floating portion FB due tothe adjacent source/drain regions S/D, may be achieved since the depthof the source/drain regions S/D enables impurities to be doped deeper ascompared with the depth of the channel region of the memory celltransistors M0-M7; M8-M15; M16-M23. In one embodiment, the depth of thesource/drain regions S/D may correspond to the total thickness of thecommon semiconductor layer 21. As a result, each of the memory celltransistors M0 to M7 (M8 to M15; M16 to M23) implements a four-terminalMOSFET composed of the first and second source/drains S/D, the gateelectrode 40, and a floating portion FB as shown in FIG. 1B.

Electrical insulation or isolation of the floating part FB from thesurroundings permits a slight degree of insulation or isolation, withoutlimited to a complete insulation or isolation. The slight degree ofinsulation or isolation means that data stored in the form of charges inthe floating portion FB due to an electrical leak may be destroyed inthe form of a leakage current and before the stored data is completelydestroyed, a refresh operation of a typical DRAM device, which is arepetitive process of reading and rewriting stored data can beperformed.

The first end 21 a of the common semiconductor layer 21 may beelectrically connected to the first conductive member 15 on the side ofthe substrate 10 and the second end 21 b is electrically connected tothe second conductive member 60. In one embodiment, the first conductivemember 15 may be one electrode of a switching element (not shown) forselection of a memory string MS, or a conductive electrode that iselectrically connected to one electrode of the switching element.However, this is an exemplary case, and the first conductive member maybe any conductors such as a wiring member itself for connection to asource line, a source line contact, and another memory string, one endof a switching element or logic element, or an electrode connected toone end of a switching element or logic element, a contact, a plug, orrewiring.

In one embodiment, the second conductive member 60 may be a wire, e.g.,a bit line, for reading data of a selected memory cell transistor.However, this is only an exemplary case. Similar to the first conductivemember described above, the second conductive member 60 may be anyconductors such as a wiring member itself for connection with anothercircuit member, one end of the switching element or the logic element,or an electrode connected to one end of the switching element or thelogic element, a contact, plug, or a rewiring, and the present inventionis not limited thereto. In FIG. 1B, a first end MSa of the commonsemiconductor layer 21, i.e., a memory string MS_n0, MS_n1, MS_n2provided thereby is connected to a source line (not shown) and/or to aground. A second end MSb are connected to the bit lines BL0, BL1 andBL2. Accordingly, the memory strings MS0, MS1 and MS2 in which aplurality of memory cells M0-M7; M8-M15; M16-M23 each having a floatingbody between the source line and the bit line are connected in seriesmay be implemented.

The serially connected memory cells have a structure similar to that ofa memory string of a NAND flash memory device. However, the seriallyconnected memory cells are capable of random access like conventionalDRAMs. In an embodiment of the present invention, since memory cells inseries have one bit line contact, as compared to a structure in whicheach memory cell has a bit line contact as in the case of the memorycells connected in parallel or a NOR type array, the parasiticcapacitance of a bit line may be reduced. In addition, according to theembodiment of the present invention, the sensing current may increasedue to the decrease of the parasitic capacitance and thus, the sensingmargin may be improved.

The gate electrode 40 of each memory cell transistor may be electricallyconnected to the word lines WL0 to WL7. Each of the bit lines WL0 to WL7may be integrated with the gate electrode 40 of each memory celltransistor, but the present invention is not limited thereto. The gateelectrode 40 may have a GAA (Gate-All-Around) shape surrounding thecommon semiconductor layer 21 of each memory cell region. The word linesWL0 to WL7 may extend, for example, in the X direction and intersect thebit lines BL0 to BL2 extended in the Y direction. The memory cells maybe selected by selecting the word lines WL0 to WL7 and the bit lines BL0to BL2 which intersect with each other.

Although the embodiment shown in FIG. 1A relates to a three-dimensionalsemiconductor device in which a common semiconductor layer is verticallyextended on a substrate, the common semiconductor layer may behorizontally extended to the substrate, and the horizontally extendedcommon semiconductor layer may be vertically laminated to a substrate inorder to realize a three-dimensional DRAM device. One end of thehorizontally extended common semiconductor layer may be connected toeach other by a conductive plug, but the present invention is notlimited thereto.

FIG. 2A and FIG. 2B are cross-sectional diagrams illustrating a logicstate of a memory cell transistor MC according to an exemplaryembodiment of the present invention, and FIG. 3 is a graph illustratingan I-V characteristic change according to a logic state of a memory celltransistor.

Referring to FIG. 2A and FIG. 2B, the threshold voltage of the memorycell transistor MC or the conductance of the channel is varied dependingon whether the floating portion FB of the memory cell transistor MC ischarged or not. That is, depending on whether the charge is injectedinto the floating portion FB or is eliminated, “1” or “0” may be stored.FIG. 2A shows a case where the floating portion FB charged withexcessive holes (+ charge) corresponds to a logic “1” and FIG. 2B showsa case where the floating portion FB charged with electrons correspondsto “0”. In another embodiment, the case where the hole is charged maycorrespond to the logic “0”, and the case where the electron is chargedmay correspond to the logic “1”.

In FIG. 3, the curves A1 to A3 show the I-V characteristics of thememory cell transistors corresponding to the logic “1” where holes arecharged in the floating portion, and the curves B1 to B3 correspond tothe logic “0” where electrons are charged in the floating portion. It isconfirmed that the current Is of the memory cell transistor in the logic“1” state is larger than the current Is of the memory cell transistor inthe logic “0” state, at the constant drain voltage Vd and the constantgate voltage Vg. As the gate voltage Vg is increasing, the the currentIs at the same drain voltage Vd is greater.

As described above, the current output value of the memory celltransistor changes depending on whether the floating portion is chargedor not, and polarities of a charge, so that it may be applied as amemory device. Further, as described above, since the threshold voltageor the conductance of the channel is changing according to the signand/or the charge amount of the electric charge charged in the floatingportion FB, it is not limited to binary states such as logics “0” and“1”. Logic states for multi-bit implementations having more than 2 bitsmay be implemented. Charging of the floating portion may be achieved byintentionally injecting or removing charges for the floating portion. Inthis specification, the operation for injecting charges to the floatingportion is referred to as a recording operation and the operation forremoving charges may be referred to as an erasing operation. Theseoperations will be described in detail later.

Since the electric charges injected into the floating portion areincompletely electrically isolated as described above, the charges maybe diffused and leaked to the adjacent first and second source/drainregions S/D over time, or may flow into the insulator plug 22 and maydissipate. As described above, the charges injected into the floatingportion undergo a natural decay over time, which means that the datastored in the memory cell is lost. A periodic refresh operation may beperformed in order to prevent the data from being lost and to maintainthe data stored in the memory cell transistor. The refresh operationwill be described later in detail with reference to FIG. 10.

FIG. 4 is a graph illustrating I-V characteristics for explaining aprogramming operation of a memory cell transistor according to anembodiment of the present invention. FIGS. 5A and 5B are graphs forexplaining I-V characteristics according to various embodiments of thepresent invention.

Referring to FIG. 4, a programming operation of a memory cell transistoraccording to an embodiment of the present invention may be explained.The measured memory cell transistor is related to an N-type memory celltransistor whose active layer is made of polysilicon and is extractedfrom a dissertation, “Capacitorless 1T-DRAM on Crystallized Poly-SiTFT”, which was published in the Journal of Nanoscience andNanotechnology, Vol. 11, pp, 5608 to 5611, and was co-authored by MinSoo Kim and Won Ju Cho.

If the N-type memory cell transistor is programmed with a positivecharge as described below, the threshold voltage may be reduced. Whenthe N-type memory cell transistor is programmed with a negative charge,the threshold voltage may increase.

The evaluated memory cell transistor relates to an N-type memory celltransistor. However, the present invention is not limited to this, and aP-type memory cell transistor is also included within the scope of thepresent invention. In the case of a P-type memory cell transistor, thebehavior opposing to the polarity of the N-type memory cell transistormay be observed. For example, the threshold voltage may be increased ifthe P-type memory cell transistor is programmed with a positive charge,and the threshold voltage may be decreased when the P-type memory celltransistor is programmed with a negative charge.

Under the state where the source electrode of the measured N-type memorycell transistor is grounded and 0.1 V (curve C1) and 1 V (curve C2) areapplied to the drain electrode and the drain electrode, respectively,when a negative voltage is applied to the gate electrode as shown inFIG. 4, a large electric field is formed between the gate electrode andthe drain electrode. As a result, a leakage current due to a GIDL (GateInduced Drain Leakage) mechanism is generated from the drain electrodetoward the source electrode, and a charge, for example, a hole may becharged in the floating portion of the memory cell transistor or anelectron may flow out toward the drain electrode because of the leakagecurrent. A charging due to GIDL is increasing as the drain voltage isincreasing. In this way, the leakage current caused by the GIDLmechanism occurring in a memory cell transistor may be applied to aprogramming operation of a memory cell transistor, that is, an operationfor charging the floating portion.

In another embodiment, the programming operation for charging thefloating portion may be performed by an impact-ionization (I-I)mechanism in addition to the GIDL leakage current effect described asabove. For example, when the gate electrode is grounded and a highvoltage bias is applied to the drain electrode, a current may flow fromthe drain electrode toward the source electrode, and this current may beused as a current for charging the floating portion.

Referring to FIG. 5A, in the case of the memory cell transistorprogrammed by the GIDL mechanism, there is a current level difference ofabout 3 μA or more between the sensing current (the time constant τ is 1μs) of the logic state “1”, and the sensing current (the time constant τis 1 μs) of the logic state “0”. Since the logic state “1” has apredetermined retention time, it is confirmed that a refresh operationhaving a period shorter than the retention time is necessary inconsideration of this situation. The data retention time may be adjustedaccording to materials, designs, and/or a refresh period setting of thememory cell transistor, and thus the present invention should not belimited thereto.

Referring to FIG. 5B, a difference in sensing current is occurringbetween the logic “1” and the logic “0” even in the memory celltransistor programmed by the I-I mechanism and the data retention timeis also found to be similar to that of the GIDL mechanism. It may beappreciated that a large current instantaneously flows during aprogramming operation since a high voltage bias is applied to the drainelectrode, but the level difference of the sensing current in both datastates is reduced to less than 2 μA, which is smaller than the currentlevel difference in the GIDL mechanism.

The measured results illustrated in FIG. 5A and FIG. 5B relate to thecase where the common semiconductor layer is formed of polysiliconrather than single crystal silicon. Even in this case, it may beunderstood that a DRAM device using a floating body effect may berealized.

In the case of the program driving due to a process for charging afloating portion according to the GIDL mechanism and the I-I mechanismdescribed above, the programming operation using the GIDL mechanism ismore preferable than the programming operation using the I-I mechanismin terms of a sensing margin. At the same time, in the NAND type memorystructure, the programming operation using the GIDL mechanism has anadvantage simplifying the cell selection scheme as disclosed withreference to FIG. 6 in that one memory cell transistor may be selectedby combining the gate voltage WL and the drain voltage BL. theprogramming operation using the 14 mechanism may require a somewhatcomplicated gate voltage WL drive because there is a case that thevoltages applied to the gate electrode of the memory cell transistorselected for the program and the gate electrode of the non-selectedmemory cell transistor must be grounded. Therefore, application of thegeneral cell selection scheme may be relatively difficult as compared tothat of the GIDL mechanism.

FIG. 6A is a circuit diagram illustrating a method of programming amemory cell transistor according to an embodiment, and FIG. 6B is across-sectional diagram schematically illustrating a programmingoperation of a selected memory cell transistor.

Referring to FIG. 6A and FIG. 6B, a relatively large amount of the firstdriving voltage VDD for induction of the GIDL mechanism, for example, alarge voltage of 3 V is applied to a bit line BL1 of the memory stringSMS to which the selected memory cell transistor SM shown by the dottedcircle belongs, and the bit lines BL0 and BL2 of the non-selected memorystring USMS are grounded or a second driving voltage of a lower amountthan the first driving voltage VDD, for example, a voltage of 0.5 V maybe applied to the bit lines BL0 and BL2. At the same time, the word lineof the adjacent other unselected memory cell transistors of the memorystring SMS to which the selected memory cell transistor SM belongs issupplied with a positive pass voltage V_(PASS_1), for example, a voltageof 3.5 V, which is greater than the threshold voltage of the memory celltransistor in the case of logic “0”. At the same time, a negativeprogram voltage V_(PGM), for example, −1 V, may be applied to the wordline of the selected memory cell transistor SM. In this case, all theunselected memory cell transistors are in a turned-on state. As aresult, the voltage VDD applied to the selected bit line may be appliedto the second source/drain electrode S/D₂ of the selected memory celltransistor, and the first source/drain electrode S/D₁ may be grounded. Acurrent by the GIDL mechanism is generated at the second source/drainelectrode S/D₂ of the selected memory cell transistor, whereby aprogramming operation that the floating portion of the selected memorycell transistor SM is be charged with excessive holes may be performed.

In another embodiment, as shown in FIG. 6A, the word line of the lowermemory cell transistors M8, M9 and M10 on the bit line BL1 side of thenon-selected memory cell transistors M8 to M10 and M12-M15 of the memorystring SMS to which the selected memory cell transistor SM belongs issupplied with a high-pass voltage VPASS_1 higher than the thresholdvoltage of the memory cell transistor in the case of logic of “0”, forexample, 3.5 V and the source line is grounded. Therefore, the word lineof the upper memory cell transistors M12, M13, M14, and M15 on thesource line side is supplied with a low pass voltage_(VPASS_2), forexample, 1.5 V, smaller than the high pass voltage_(PASS_1). As aresult, the upper memory cell transistors M12, M13, M14, and M15 may beturned on. In this way, by applying a low-pass voltage_(VPASS_2) lowerthan the lower memory cell transistors to the upper memory celltransistors M12, M13, M14, and M15, it is possible to save powerconsumed in the entire programming operation. The values of theabove-mentioned voltages are illustrative, and the present invention isnot limited thereto.

The type of the voltage level may be simplified as much as possible inorder to simplify the configuration of the peripheral circuit fordriving the memory element. For example, the second driving voltageapplied to the bit lines BL0, BL2 of the non-selected memory string USMSin the programming operation may be set to a suitable voltage, forexample, 0.5 V, so that it may match the fourth driving voltage used inthe reading operation, as described later.

FIG. 7A and FIG. 7B are a circuit diagram illustrating a method ofreading a memory cell transistor according to an embodiment of thepresent invention, and a graph illustrating I-V characteristics.

Referring to FIG. 7A, the reading operation is the process to determinewhether the selected memory cell transistor SM is a logic “1” or “0”,and to determine its threshold voltage. The bit line BL1 for the memorystring SMS to which the selected memory cell transistor SM is suppliedwith a positive third driving voltage V_(DD), for example, 0.5 V, andthe bit lines BL0, BL2 of a non-elected memory string is grounded or thefourth driving voltage less than the third driving voltage V_(DD) may beapplied to the bit lines BL0, BL2. At the same time, the word lines forthe non-selected memory cell transistors M8˜M10, M12˜M15 of the memorystring SMS to which the selected memory cell transistor SM belongs issupplied with the second pass voltage V_(PASS) larger than the thresholdvoltage of a memory cell transistor in case of a ground state or thelogic “0”. Furthermore, a positive reading voltage V_(READ) (>0 V) maybe applied to the word line of the selected memory cell transistor SM.In addition, a positive reading voltage V_(READ) (>0V) may be applied tothe word line of the selected memory cell transistor SM. A suitablevoltage may be selected as the above reading voltage V_(READ) in orderto identify the threshold voltage of logic “1” and the threshold voltageof logic “0”, and the voltage level corresponding to the operatingvoltage of the sense amplifier may be set. In one embodiment, thepositive reading voltage V_(READ) may have a voltage level between thethreshold voltage of logic “1” and the threshold voltage of logic “0”.

In the embodiment illustrated in FIG. 7, the feature that the same passvoltage is applied to the non-election word line regardless of the upperand lower memory cell transistors is illustrated, and the pass voltagemay be a pass voltage of a low level, e.g. a second pass voltage at anprogramming operation, for example 1.5 V.

Referring to FIG. 7, if the memory cell transistor is programmed fromlogic “0” to logic “1”, the I-V curve is shifted to the left side asshown by arrow K and much currents will flow in the case of logic “1”(curve C1), and a relatively smaller current will flow in the case oflogic “0” (curve C2) in response to the same reading voltage, and thus,data may be detected from the selected memory cell transistor selectedthrough the selected bit line.

FIG. 8A is a circuit diagram illustrating a method of erasing a memorycell transistor according to an embodiment of the present invention, andFIG. 8B is a cross sectional diagram schematically explaining theerasing operation of erased memory cell transistors.

Referring FIG. 8A, in an erasing operation, a fifth negative drivingvoltage V_(DD), for example, −0.5V may be applied to the bit line BL1 ofthe memory string SMS to which the selected memory cell transistor SMbelongs, and the third pass voltage V_(PASS), for example, 1.5V may beapplied to all word lines. A sixth positive driving voltage, for example0.5V, may be applied to the bit lines BL0, BL2 of a non-selected memorystring USMS.

In this case, the selected memory string SMS will be subject to auniform voltage drop from the Bit line BL1 to the source line. At thistime, as shown in FIG. 8b , a forward bias is applied to the floatingportion from the second source/drain electrode SD₂ of each memory celltransistor, and negative charges, i.e. electrons, are injected from thefirst source/drain electrode S1. Therefore, the charged state of thefloating portion may be neutralized or may be charged into an oppositepolarity, that is, a negative state due to excessive electrons.According to one embodiment of the present invention, an erasingoperation is identically performed for all memory cell transistors ofthe memory string SMS to which the selected memory cell transistorsbelong, without any special options as indicated by the dotted circle.In this respect, this erasing operation of the present invention isdistinguished from a conventional operation for erasing DRAM device,which selectively erases only the selected memory cell transistorsselected. Also, an operation for recovering the data state of thenon-selected memory cell transistor is required since the erasingoperation is identically performed for other non-selected memory celltransistors along with the erasing operation of the selected memory celltransistor.

The voltage described with respect to the driving voltage and the passvoltage which are mentioned while referring to FIG. 6A and FIG. 8B isexemplary and the present invention is not limited to this. Also, asillustrated in the drawings, some of the driving voltages used duringthe programming stage, a reading stage, and an erasing stage may beidentical and some of the pass voltages may be also identical. It mayalso simplify the configuration of the driver by making the values ofsome driving voltages and some pass voltages consistent.

FIG. 9 is a circuit diagram illustrating a semiconductor memory deviceincluding a row buffer memory RBM according to one embodiment of thepresent invention.

Referring to FIG. 9, during the erasing operation of the selected memorycell transistor, the data status of the other selected memory celltransistors belonging to the same memory string will also be erased.Thus, a row buffer memory is required in order to back up the datastatus of each memory cell transistor. The number of the row buffermemory equal to the number of memory cells may be required. A correctionoperation includes an erasing operation and a programming operation,which may require a row buffer memory in the correction operation.

In another embodiment, as shown in FIG. 9, the memory element may have afolded. bit line structure wherein the first bit line BL, and theneighboring second bit line(/BL, also which is referred to as areference bit line) with the first bit line BL is formed as a pair, sothat the noise cancellation efficiency may be optimized through aparallel configuration connected to each of both ends of a senseamplifier.

In this case, as shown in FIG. 9. the row buffer memory RB may be sharedbetween the memory cells corresponding to the first bit line BL and thesecond bit line /BL, respectively. In this case, the number of the rowbuffer memories RB may be ½ of the total number of memory cells. In oneembodiment, the row buffer memory (RB) may implement a short-term datastorage function and thus may have a simple DRAM structure. However,this is an exemplary case and the buffer memory may have an SRAMstructure.

In one embodiment, the sense amplifier SA may have a circuit structureof a latch type. During the reading operation, the reference bit lineshould be pre-charged to a reference voltage, and the reference voltagemay have a low threshold voltage of the sense amplifier. For example,the low threshold voltage may have a value of 0.5 V used to perform areading operation of the sense amplifier, which may be adjusted inconsideration of device characteristics depending on the memory celltransistor and/or the sense amplifier itself, and the present inventionis not limited thereto. In one embodiment, an erasing operation of amemory cell transistor according to an embodiment of the presentinvention includes an step for accessing the memory cell transistors ofthe memory string to which the memory cell transistor belongs areaccessed before the erasing operation of the selected memory celltransistor and a step for transcribing the logic states of each ofcorresponding memory cell transistors to the corresponding row buffermemory. Thereafter, an erasing operation or a correction operation maybe performed on the entire memory string as described with reference toFIG. 8A and FIG. 5B. For example, a negative program voltage, forexample, a voltage of −0.5 V may be applied to the erasing operation,and a switch controller circuit may be required, so that a pre-chargevoltage, for example, a voltage distinguished from 0.5 V may be applied.

When the erasing operation or the correction operation for the entirememory string to which the selected memory cell belongs is completed forerasing or correcting the selected memory cell, the data state of thenon-selected memory cell transistors is restored based on the datastored in the corresponding buffer memory. Such a data restoration maybe achieved by sequentially performing the programming operationdescribed with reference to FIGS. 6A and 6B for the non-selected memorycell transistors.

In the folded bit line structure, at least one or more selection linesS1, S2 may be provided for selection of the bit line. Further, thememory device may further include a wiring I/O and switch members SW0and SW1 for transmitting input and output signals. The nodes indicatedby dots show memory cell transistors. The illustrated folded bit linestructure is exemplary, and the memory device of the present inventionmay have an open bit line structure which is very advantageous in termsof a space as described above, and the present invention is not limitedthereto.

FIG. 10 is a waveform diagram for explaining a refresh operation of asemiconductor memory device according to an embodiment of the presentinvention.

Referring to FIG. 10, in one embodiment, a refresh operation may beperformed on a daily basis for all memory (or also referred to as apage) connected to, for example, eight word lines. The first step mayinclude a step for reading a memory cell and a step for storing the readdata of the memory cell in a row buffer memory as indicated by processA. In the first step, the voltage applied to the word line issequentially reduced to the vicinity of the threshold voltage of thememory cell transistor, the current level difference is detected throughthe sense amplifier, and it is possible to back up the read data byenabling the row buffer memory allocated to the memory cell transistorsM0-M7 of each of the word lines.

The second stage of the refresh operation may include an erasingoperation, as indicated by process B. The second step may be performedsimply by reducing all the bit lines to about −0.5 V at the same time.The third step of the refresh operation is to write the data stored inthe row buffer memory back to the corresponding memory cell, as shown inprocess C. In this third step, if a negative program voltage VPGMcapable of leading a GIDL to the word line, for example, −1.0V isapplied and an appropriate driving voltage, for example, 3 V (when thelogic is “1”) or 0.5 V (when the logic is “0” is applied to the selectedbit line according to the data of the row buffer memory, the refresheddata may be stored in each of the floating portions of the memory cell.

Since the first to third steps are performed simultaneously on all thebit lines BL0 to BLn, the time loss due to the refresh is notsignificantly different from that of a general DRAM memory device. Asdescribed above, when the refresh operation is completed for one area ofmemory cells, a refresh operation may be performed for memory cells inother areas. For example, when the refresh operation for one page iscompleted, the refresh operation may be repeated for another page in thesame manner. Further, since the entire page data remains in the rowbuffer memory after the refresh operation, an additional operation oftransferring the data of one page to another page may be realized byutilizing the above feature.

FIG. 11 is an exploded perspective diagram illustrating athree-dimensional architecture of a semiconductor memory device 1000including a row buffer memory RB according to an embodiment of thepresent invention.

Referring to FIG. 11, the semiconductor memory device 1000 may includeat least more than one memory layer MAL1, MAL2 including an array ofmemory cells according to an embodiment of the present invention. If therow buffer memory layer RBL is required by the number of memory cells ofthe memory string, a large available area is required for providing thesense amplifier SA together with the row buffer memory RB. In order tosolve this problem, in one embodiment, the semiconductor memory device1000 may have a structure in which the memory cell arrays MAL1 and MAL2and the row butler memory layer RBL are separated from each other. Forexample, a GUA (CMOS Under Array) and/or a PUC (Peri Under Cell)architecture may be employed in which the row buffer memory layer RBL isdisposed at the bottom of the memory cell arrays MAL1 and MAL2. In thiscase, a chip size may be reduced as compared with s process for formingthe row butler memory RB and the memory cell arrays MAL1 and MAL2 on oneplane, and the reduced area increases the size margin of otherperipheral circuits such as a sense amplifier SA, thereby securing alarge area for a row buffer memory RB and a sense amplifier SA.

A row decoder XD, a column decoder YD, a read/write circuit (not shown)and control logic (not shown) for controlling them are formed on asubstrate, and a row buffer memory layer RBL is formed thereon. The DRAMmemory element layers MAL1 and MAL2 according to the embodiments of thepresent invention may be formed on the row buffer memory layer RBL.

FIG. 12A-FIG. 12I are cross-sectional diagrams sequentially illustratinga method of fabricating a semiconductor memory device according to anembodiment of the present invention, and FIG. 13A-13I are plan diagramscorresponding to respective cross-sectional diagrams of FIG. 12A to FIG.12I.

Referring to FIG. 12A and FIG. 13A, first of all, a substrate 10 isprovided. An impurity region 10 a or wiring for forming a source linemay be formed on the substrate 10. Alternatively, various drivingelements including transistors or the above-described row buffer memorymay be formed. In another embodiment, the substrate 10 may be anystructure for forming another package stacking frame, such as aninterposer substrate or a lead frame.

The impurity-containing insulating layer 30′ and the sacrificial layer35′ are alternately repeatedly laminated on the substrate 10. The numberof times of repeated stacking may be determined in consideration of thenumber of stages of memory cells, the number of selected transistors,and the number of ground transistors.

In one embodiment, as the impurity-containing insulating layer 30′functions as an impurity source for forming the first and secondsource/drain electrodes on the common semiconductor layer of theunderlying film, as described later, the impurity-containing insulatinglayer 30′ includes a dopant as an impurity for forming the first and thesecond source/drain electrodes. For example, when the first and secondsource/drain electrodes are n-type, the impurity-containing insulatinglayer 30′ may include an insulator matrix such as silicon oxide orsilicon nitride, and dopant elements of Group 2 or Group 3, Group 5 orGroup 7 contained in the insulator matrix as the impurity. For example,the dopant element of Group 2 dopant element may include zinc orcadmium, the dopant element of the Group 3 may include boron, andgallium, or indium, the dopant element of Group 5 may be phosphorus, andthe dopant element of the Group 7 may be fluorine. The impurities may bephysically dispersed in the insulator matrix or may be chemicallycombined to the material for forming the insulator matrix.Alternatively, the impurities may be physically or chemically adsorbedor coated on the surface of the insulator matrix, but the presentinvention is not limited thereto. In one embodiment, theimpurity-containing insulating layer 30′ may include a material such asphosphoric silicate glass PSG.

The sacrificial layer 35′ may be formed of a material having an etchingselectivity with the impurity-containing the insulating film 30′. Forexample, when the impurity-containing insulating layer 30′ is a siliconoxide-based material, the sacrificial layer 35′ may be silicon nitride.The thicknesses of the impurity-containing insulating layer 30′ and thesacrificial layer 35′ may be determined in consideration of the intervalbetween the memory cells and the width of the gate electrode.

Referring to FIG. 12B and FIG. 13B, thereafter, first holes H1 areformed through the stack of the impurity-containing insulating layer 30′and the sacrificial layer 35′ repeatedly laminated in the verticaldirection. The cross-sectional shape of the first holes H1 may have anyshape such as an arc or an ellipse in consideration of the profile ofthe electric field of the gate electrode of the GAA type on the channellayer, and the present invention is not limited thereto.

Referring to FIG. 12C and FIG. 13C, the semiconductor pillars 20 areformed in each of the first holes H1. The semiconductor layer 21 isformed in the first holes H1 through a thin film forming process andthen, the semiconductor pillars 20 may be provided by filling the secondholes (not shown) defined by the semiconductor layer 21 with the coreinsulator 22. The bottom of the semiconductor layer 21 may be formed incontact with the substrate 10 and as a result, may be electricallyconnected to a source line formed on the substrate 10.

The semiconductor layer 21 may include at least a part ofpolycrystalline silicon or epitaxially grown silicon single crystal. Inaddition, the semiconductor layer 21 may have a stacked structure of atleast two or more semiconductor layers such as a silicon layer/agermanium layer, but the present invention is not limited thereto.

For example, the semiconductor layer 21 may include a two-dimensionalmaterial, an oxide semiconductor, or a compound semiconductor, but thepresent invention is not limited thereto. In one embodiment, a trapmember for guiding the charge trap may be further formed to extend thetime of leakage of electrons or holes charged into the floating portionor to increase the charging efficiency. The trap member may be formedwith or separately from the semiconductor layer 21, but the presentinvention is not limited thereto. For example, a crystal grain of asemiconductor material, a defect structure, a dispersed nanocrystal, atwo-dimensional material such as graph an insulator thin film such as asilicon nitride layer, or a combination thereof may be formed in atleast floating portion of the semiconductor layer 21. The trap membermay provide any energy level for trapping charges transferred from thesource/drain regions, and the present invention is not limited to theabove-described examples.

The thin film forming process for forming the semiconductor layer 21 maybe chemical vapor deposition or atomic layer deposition with high stepcoverage. The semiconductor layer 21 provides a common semiconductorlayer forming a channel layer of the memory string.

The core insulator 22 may be formed of, for example, silicon oxidehaving an etching selectivity with the sacrificial layer 35′. Asdescribed above with referring to FIG. 2B, the semiconductor pillars 20are vertically aligned with the substrate 10. As another example, thesemiconductor pillars 20 may have a U-shape, such as a widely-knownPiped BiCs (P-BicS) structure. In addition, a semiconductor column madeof only the solid semiconductor layer having a filled inside without thecore insulator 22 may be provided.

Referring to FIG. 12D and FIG. 13D, in connection with the substrate 10on which the semiconductor pillars 20 are formed, a first trench regionT1 is formed in the direction (Z direction) vertically extended to thefirst direction (X direction). The first trench region T1 separates thesemiconductor pillars 20 aligned in the second direction (Y direction),thereby forming a stacked structure SS1 of the impurity-containinginsulating layer pattern 30I and the sacrificial layer pattern 35I Isformed.

The first, trench region T1 separates the semiconductor pillars 20aligned in the second direction (Y direction), thereby forming a stackedstructure SS1 of the impurity-containing insulating layer pattern 30Iand the sacrificial layer pattern 35I.

Referring to FIG. 12E and FIG. 13E, the sacrificial layer pattern 35Imay be removed from the laminated structure SS1 of theimpurity-containing insulating layer pattern 30I and the sacrificiallayer pattern 35I exposed through the first trench region T1. At thistime, only the sacrificial layer pattern 35I may be selectively removedusing the etching selectivity of the sacrificial layer pattern 35I andthe impurity-containing insulating layer pattern 30I. As a result, thecell spaces CE that expose the sidewalk of the semiconductor pillars 20and the surface of the semiconductor layer 21 may be formed between thestacked impurity-containing insulating layer patterns 30I.

Referring to FIG. 12F and FIG. 13F, a heat treatment is performed on thesubstrate 10 on which the cell spaces CE are formed. The heat treatmentmay be performed in an oxidizing atmosphere such as O₂ or O₃. On thesurface of the semiconductor layer 21 exposed through the cell spaces(CE) through the heat treatment, a gate insulating film 30 is formed viaa thermal oxidation process. At the same time when the gate insulatingfilm 30 is formed, the impurities contained in the impurity-containinginsulating layer pattern (30I) are thermally diffused to the area of thesemiconductor layer 21 adjacent to the impurity-containing insulatinglayer pattern (30I). A region of the semiconductor layer 21 under theimpurity-containing insulating layer pattern (30I) is locally doped andthus, a source/drain region S/D may be formed. In this manner, accordingto an embodiment of the present invention, there is an advantage thatthe gate insulating film 30 and the source/drain region S/D may beformed at the same time over the plurality of memory strings via asingle heat treatment

Referring to FIG. 12G and FIG. 13G, a conductive film 40′ filling atleast a part of the cell spaces CE, in which the gate insulating film 30is formed, is formed. The conductive film 40′ may have a singleconductive film such as titanium nitride, polycrystalline silicon,tungsten, or aluminum or a laminated structure of two or more such as atitanium nitride film TiN/tungsten W. The present invention is notlimited thereto.

Referring to FIG. 12H and FIG. 13H, a second trench region T2 extendedin the first direction (X direction) and the vertical direction (Zdirection) is formed on the substrate 10 on which the conductive film40′ is formed. Then, referring to FIG. 12I and FIG. 13I, an electricalisolation between the memory strings in the second direction (Ydirection) may be achieved via the element isolation film 70 filling thesecond trench region T2. Thereafter, a process for forming an electricalwiring is performed, so that the electrical wiring such as the bit linemay come into contact with the exposed end of the interlayer insulatingfilm and the memory string. Consequently, the semiconductor memorydevice may be manufactured by the process for forming an electricalwiring.

The present invention described as above is not limited to theabove-described embodiments and the accompanying drawings. It will beapparent to those skilled in the art that various substitutions,modifications and variations can be made in the present inventionwithout departing from the spirit or scope of the invention as definedin the appended claims.

What is claimed is:
 1. A method of driving a semiconductor memory devicecomprising, memory strings, each of the memory strings including aplurality of memory cell transistors which are connected in series andhaving a floating portion; word lines coupled to a gate electrode ofeach of the plurality of memory cell transistors; bit lines connected toone end of each of the memory strings; source lines connected to otherend of each of the memory strings; a row decoder electrically connectedto the plurality of memory cell transistors through the word lines; anda column decoder electrically coupled to the plurality of memory celltransistors through the bit line, the method comprising, a programmingstep including a step for applying a first driving voltage to a selectedbit line, and applying a second driving voltage less than the firstdriving voltage to non-selected bit lines or grounding the non-selectedbit lines; and a step for applying a program voltage to the selectedword line and applying a first pass voltage to the unselected wordlines; and a reading step including a step for applying a third drivingvoltage to the selected bit line and applying a fourth driving voltageto the non-selected bit lines or grounding the non-selected bit lines;and a step for applying a reading voltage to the selected word line andapplying a second pass voltage to the unselected word lines.
 2. Themethod of driving a semiconductor memory device according to claim 1,wherein in the programming step, the first pass voltage includes ahigh-pass voltage applied to the word lines on the selected bit lineside among the non-selected word lines, and a low-pass voltage smallerthan the high-pass voltage applied to the word lines on the source lineside of the unselected word lines.
 3. The method of driving asemiconductor memory device according to claim 1, wherein in the readingstep, the third driving voltage and the fourth driving voltage areidentical to each other or the fourth driving voltage is less than thethird driving voltage.
 4. The method of driving a semiconductor memorydevice according to claim 1, wherein the second driving voltage and thefourth driving voltage are identical to each other.
 5. The method ofdriving a semiconductor memory device according to claim 1, wherein inthe programming step, the floating portion is charged by the GIDLmechanism.
 6. The method of driving a semiconductor memory deviceaccording to claim 1, further comprising an erasing step including astep for applying a fifth negative driving voltage to the selected bitline and applying a sixth positive driving voltage to the unselected bitlines; and a step for applying a third pass voltage to all the wordlines.
 7. The method of driving a semiconductor memory device accordingto claim 6, wherein the third pass voltage is identical to the firstpass voltage or the second pass voltage.
 8. The method of driving asemiconductor memory device according to claim 6, further comprising astep for backing up data state of the non-selected memory celltransistor belonging to the selected memory string prior to the erasingstep.
 9. The method of driving a semiconductor memory device accordingto claim 6, wherein the step for backing up data state is performed by arow buffer memory.
 10. The method of driving a semiconductor memorydevice according to claim 1, further comprising a refresh step ofreading data state of the memory cell transistors at a predeterminedperiod and then programming the memory cell transistors.